Semiconductor chip packages having bond over active circuit (boac) structures

A bond over active circuit (BOAC) semiconductor die package, comprising:

• a semiconductor die having a device side comprising a circuit;
• a conductive member electrically coupled to the circuit, wherein the conductive member comprises an outer surface that is spaced away from the circuit and a plurality of side surfaces extending from the outer surface, and wherein the conductive member comprises a plurality of layers of different metal materials;
• a seed layer abutting the plurality of side surfaces of the conductive member;
• and
• an insulating member abutting the seed layer such that the seed layer is between the plurality of side surfaces and the insulating member.

A bond over active circuit (BOAC) semiconductor die package, comprising:

• a semiconductor die having a device side comprising a circuit;
• an insulating member covering the circuit;
• a conductive member positioned within the insulating member and electrically coupled to the circuit, wherein the conductive member comprises a longitudinal axis, an outer surface axially spaced from the circuit along the longitudinal axis, and an outer perimeter extending from the outer surface toward the circuit, and wherein the conductive member comprises a plurality of layers of different metal materials;
• and
• a seed layer surrounding the conductive member along the outer perimeter within the insulating member.