Electrochemical depositions of nanotwin copper materials
AssigneeApplied Materials, Inc.
InventorsJing Xu, John L. Klocke, Marvin L. Bernt, Eric J. Bergman, Kwan Wook Roh
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AssigneeApplied Materials, Inc.
InventorsJing Xu, John L. Klocke, Marvin L. Bernt, Eric J. Bergman, Kwan Wook Roh
Estimating the term…
Exemplary methods of electroplating include contacting a patterned substrate with a plating bath in an electroplating chamber, where the pattern substrate includes at least one opening having a bottom surface and one or more sidewall surfaces. The methods may further include forming a nanotwin-containing metal material in the at least one opening. The metal material may be formed by two or more cycles that include delivering a forward current from a power supply through the plating bath of the electroplating chamber for a first period of time, plating a first amount of the metal on the bottom surface of the opening on the patterned substrate and a second amount of the metal on the sidewall surfaces of the opening, and delivering a reverse current from the power supply through the plating bath of the electroplating chamber to remove some of the metal plated in the opening on the patterned substrate.
An electroplating method comprising:
The electroplating method of claim 12, wherein the forward current is characterized by an on period of greater than or about 10 milliseconds.
The electroplating method of claim 12, wherein the forward current is characterized by an average current density of greater than or about 3 mA/cm2.
The electroplating method of claim 12, wherein the reverse current is another pulsed current characterized by an on period of less than or about 10 milliseconds.
The electroplating method of claim 12, wherein the reverse current is delivered at least 1 millisecond after the pulsed forward current.
An electroplating method comprising:
An integrated circuit device structure comprising:
Dependencies are inferred from the claim text.