Semiconductor device and method of manufacturing the same
AssigneeRenesas Electronics Corporation
InventorShinji INOUE
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Abstract
A semiconductor device capable of shortening an erasing time and suppressing deterioration of retention characteristics is provided. A semiconductor device includes: a semiconductor substrate having a main surface; a gate insulating film formed on the main surface; and a gate electrode formed on the gate insulating film. The gate insulating film includes a first silicon nitride film, and a first silicon oxide film arranged between the main surface and the first silicon nitride film and in contact with the first silicon nitride film. A Si—Si bond is formed in a boundary portion between the first silicon oxide film first silicon nitride film.
Claims10
A semiconductor device comprising:
- a semiconductor substrate having a main surface;
- a gate insulating film formed on the main surface;
- and
- a gate electrode formed on the gate insulating film,
- wherein the gate insulating film includes:
- a first silicon nitride film;
- and
- a silicon oxide film arranged between the main surface and the first silicon nitride film and in contact with the first silicon nitride film, and
- wherein a Si—Si bond is formed in a boundary portion between the silicon oxide film and the first silicon nitride film.
A method of manufacturing a semiconductor device, the method comprising:
- forming a gate insulating film on a main surface of a semiconductor substrate;
- and
- forming a gate electrode on the gate insulating film,
- wherein the forming the gate insulating film includes:
- forming a silicon oxide film on the main surface;
- forming Si terminations on a surface of the silicon oxide film;
- and
- forming a silicon nitride film on the surface so that Si is bonded to each of the Si terminations.
Dependencies are inferred from the claim text.