Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAlexander KALNITSKY, Wei-Cheng WU, Harry-Hak-Lay CHUANG, Chia Wen LIANG, Li-Feng TENG
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Abstract
A semiconductor device includes a substrate, an isolation structure, a conductive structure, and a first contact structure. The isolation structure is disposed in the substrate. The conductive structure is disposed on the isolation structure. The conductive structure extends upwards from the isolation structure, in which the first contact structure has a top portion on the conductive structure and a bottom portion in contact with the isolation structure.
Claims20
A semiconductor device, comprising:
- a substrate;
- an isolation structure in the substrate;
- a conductive structure on the isolation structure;
- and
- a first contact structure extending upwards from the isolation structure, wherein the first contact structure has a top portion on the conductive structure and a bottom portion in contact with the isolation structure.
A semiconductor device, comprising:
- a substrate;
- an isolation structure in the substrate;
- a conductive structure on the isolation structure;
- a metal structure on the isolation structure and adjacent to the conductive structure;
- and
- a contact structure electrically connected to the metal structure, wherein a bottom surface of the contact structure is lower than a bottom surface of the metal structure.
A method, comprising:
- forming an isolation structure in a substrate;
- forming a conductive structure over the isolation structure;
- etching the isolation structure and the conductive structure to form an opening;
- and
- filling a conductive material in the opening to form a contact structure.
Dependencies are inferred from the claim text.