Semiconductor device segmented interconnect

A method of making a semiconductor device, comprising:

• depositing a base isolation layer;
• manufacturing a first bridge pillar extending through the base isolation layer;
• manufacturing a first transistor on a first side of the base isolation layer by
• manufacturing a first transistor channel bar, and
• manufacturing a first transistor source/drain electrode (SD electrode), wherein the first transistor SD electrode electrically connects to the bridge pillar on the first side of the base isolation layer;
• manufacturing a first metal electrode on a second side of the base isolation layer, wherein the first metal electrode electrically connects to the first bridge pillar on the second side of the base isolation layer;
• and
• manufacturing a first via electrically connected to the first metal electrode;
• and
• manufacturing a first conductive line electrically connected to the first via.

A semiconductor device, comprising:

• a substrate;
• a bridge pillar extending through the substrate;
• a first dielectric material on a first side of the substrate;
• a second dielectric material on a second side of the substrate;
• a first transistor in the first dielectric material and having a first source/drain (SD) electrode on the first side of the substrate;
• a second transistor in the second dielectric material and having a second SD electrode on the second side of the substrate;
• a first metal electrode extending through the first dielectric material and electrically connecting to a first end of the bridge pillar, wherein the first metal electrode and the first SD electrode have a same first dimension in a direction perpendicular to the first side of the substrate;
• and
• a second metal electrode extending through the second dielectric material and electrically connecting to a second end of the bridge pillar.