Diode structures with one or more raised terminals
AssigneeGlobalFoundries U.S. Inc.
InventorsVibhor Jain, Judson R. Holt
Life of this patent
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Abstract
Structures for a diode and methods of fabricating a structure for a diode. The structure includes a layer comprised of a semiconductor material. The layer includes a first section, a second section, and a third section laterally positioned between the first section and the second section. The structure includes a first terminal having a raised semiconductor layer on the first section of the layer, a second terminal including a portion on the second section of the layer, and a gate on the third section of the layer.
Claims20
A structure for a diode, the structure comprising:
- a layer comprised of a semiconductor material, the layer includes a first section, a second section, and a third section laterally positioned between the first section and the second section;
- a first terminal including a first raised semiconductor layer on the first section of the layer;
- a second terminal with a portion on the second section of the layer;
- and
- a gate on the third section of the layer.
A method of fabricating a structure for a diode, the method comprising:
- forming a first terminal including a first raised semiconductor layer on a first section of a layer comprised of a semiconductor material;
- forming a second terminal including a portion on a second section of the layer;
- and
- forming a gate on a third section of the layer,
- wherein the third section of the layer is laterally positioned between the first section of the layer and the second section of the layer.
Dependencies are inferred from the claim text.