Three-dimensional flash memory supporting hole injection erase technique and method for manufacturing same
AssigneeIucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
InventorsYun Heub SONG, Sun Jun CHOI
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Abstract
Disclosed are a three-dimensional flash memory, which reduces leakage current and supports a hole injection erase technique, and a method for manufacturing same. According to an embodiment, the three-dimensional flash memory comprises: a substrate; a channel layer extending in one direction on the substrate and having the shape of a hollow macaroni; and a P-type filer extending in the one direction while filling the inner space of the channel layer.
Claims15
A three-dimensional (3D) flash memory, comprising:
- a substrate;
- a channel layer extending in one direction on the substrate and having a shape of a hollow macaroni;
- and
- a P-type filer extending in the one direction while filling an inner space of the channel layer.
A method of manufacturing a 3D flash memory, the method comprising:
- forming a channel layer having a shape of a hollow macaroni on a substrate so as to be extended in one direction;
- and
- forming a P-type filer in an inner space of the channel layer so as to be extended in the one direction.
A method of manufacturing a 3D flash memory, the method comprising:
- forming a channel layer having a shape of a hollow macaroni on a substrate so as to be extended in one direction;
- forming a nitride layer having a shape of a hollow macaroni in an inner space of the channel layer so as to be extended in the one direction;
- and
- forming a P-type filer in an inner space of the nitride layer so as to be extended in the one direction.
Dependencies are inferred from the claim text.