Fin field-effect transistor (finfet) with a high-k material field-plating
AssigneeTexas Instruments Incorporated
InventorsMING-YEH CHUANG, UMAMAHESWARI AGHORAM
Life of this patent
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Abstract
One example includes an integrated circuit (IC) comprising a fin field effect transistor (FinFET). The FinFET includes a substrate with a fin extending from a surface of the substrate. The fin includes a source region, a drain region, and a drift region adjacent the drain region. The fin also includes a field-plating (FP) dielectric layer on a first side, a second side, and a third side of the drift region. The FP dielectric layer includes a high-K material.
Claims20
An integrated circuit (IC) comprising a fin field effect transistor (FinFET), the FinFET comprising:
- a substrate with a fin extending from a surface of the substrate, the fin comprising:
- a source region;
- a drain region;
- a drift region adjacent the drain region;
- a body region of the fin, the body region extending between the drift region and the source region;
- and
- a field-plating (FP) dielectric layer on a first side, a second side, and a third side of the drift region, the FP dielectric layer comprising a high-K material.
A method for fabricating an integrated circuit comprising a fin field effect transistor (FinFET), the method comprising:
- forming a fin on a semiconductor surface of a silicon substrate;
- forming a dielectric layer on the fin, the dielectric layer comprising a high-K material;
- etching the dielectric layer to form a field-plating (FP) dielectric layer on a first side, a second side, and a third side of a drift region of the fin;
- and
- forming a field-plate on the field-plating (FP) dielectric layer.
An integrated circuit (IC) comprising a fin field effect transistor (FinFET), the FinFET comprising:
- a substrate;
- a fin extending from a surface of the substrate, the fin comprising:
- a source region;
- a drain region;
- a drift region adjacent the drain region;
- and
- a body region adjacent to the drift region and the source region;
- a field-plating (FP) dielectric layer on a first side, a second side, and a third side of the drift region, the FP dielectric layer comprising a high-K material;
- and
- an oxide material layer on a first side, a second side, and a third side of the body region.
Dependencies are inferred from the claim text.