Semiconductor memory structure and the method for forming the same

A method for forming a semiconductor memory structure, comprising:

• providing a substrate;
• forming bit lines on the substrate, wherein the bit lines extend along a first direction;
• forming a dielectric liner on sidewalls of the bit lines, wherein the step of forming the dielectric liner comprises:
• forming a first nitride liner on sidewalls of the bit lines;
• forming an oxide liner on sidewalls of the first nitride liner;
• and
• forming a second nitride liner on sidewalls of the oxide liner;
• forming a dielectric material layer between the bit lines;
• forming an opening in the dielectric material layer, wherein sidewalls of the opening expose a portion of the second nitride liner;
• along the sidewalls of the opening, laterally removing a portion of the second nitride liner until the oxide liner is exposed;
• forming a filler in the opening;
• and
• replacing the remaining dielectric material layer with a capacitor contact.