Semiconductor structure having deep metal line and method for forming the semiconductor structure

A semiconductor structure comprising:

• a substrate including a transistor;
• a first dielectric layer disposed on the substrate;
• an interconnect structure including
• a first conductive feature that is disposed on the first dielectric layer opposite to the substrate, and
• a second dielectric layer that surrounds the first conductive feature;
• and
• a second conductive feature penetrating the interconnect structure and being electrically connected to the first conductive feature and the transistor.

A method for making a semiconductor structure, comprising:

• providing a substrate that includes a semiconductor device;
• forming a dielectric layer on the substrate;
• forming a first conductive feature in the dielectric layer, the first conductive feature being separated from the substrate;
• forming a through hole that penetrates the first conductive feature and the dielectric layer to expose a contact of the semiconductor device;
• and
• forming a second conductive feature in the through hole in such a manner that the second conductive feature is electrically connected to the first conductive feature and the contact of the semiconductor device.