Lateral bipolar transistor with gated collector

A structure comprising:

• an extrinsic base region vertically over an intrinsic base region comprising semiconductor on insulator substrate material;
• a raised collector region on the semiconductor on insulator substrate material;
• a raised emitter region on the semiconductor on insulator substrate material;
• a first structure electrically isolating the extrinsic base region from the raised emitter region;
• and
• a second structure electrically isolating the extrinsic base region from the raised collector region, the second structure being of a different composition than the first structure.

A method comprising:

• forming an extrinsic base region vertically over a semiconductor substrate and comprising asymmetrical sidewall spacers on opposing sidewalls of the extrinsic base region;
• forming a collector region on the semiconductor substrate and separated from the extrinsic base by at least a first spacer of the asymmetrical sidewall spacers;
• and
• forming an emitter region on the semiconductor substrate and separated from the extrinsic base region by a second spacer of the asymmetrical sidewall spacers.