Semiconductor device with crack-preventing structure

A semiconductor device, comprising:

• a semiconductor substrate including a chip area and a second scribe lane area;
• a low-k layer on the semiconductor substrate;
• an interlayer insulating layer on the low-k layer;
• an aluminum (Al) pad disposed in the second scribe lane area in the interlayer insulating layer above the low-k layer;
• and
• a metal liner in the second scribe lane area and vertically extending from the Al pad through the interlayer insulating layer.

A semiconductor device, comprising:

• a semiconductor substrate including a chip area, a first scribe lane area and a second scribe lane area;
• a low-k layer on the semiconductor substrate;
• and
• an interlayer insulating layer on the low-k layer,
• wherein the first scribe lane area includes:
• a first trench area;
• a first gap-fill insulating layer in the first trench area and vertically extending from the semiconductor substrate through the low-k layer and the interlayer insulating layer to expose an upper surface of the first gap-fill insulating layer through the interlayer insulating layer;
• and
• a first metal liner covering a side surface of the first gap-fill insulating layer and disposed between the first gap-fill insulating layer and the low-k layer and between the first gap-fill insulating layer and the interlayer insulating layer;
• and
• the second scribe lane area includes:
• an aluminum (Al) pad;
• a second trench area on the Al pad;
• and
• a second gap-fill insulating layer in the second trench area and vertically extending from the Al pad through the interlayer insulating layer to expose an upper surface of the second gap-fill insulating layer through the interlayer insulating layer.