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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMING CHYI LIU, CHUN-TSUNG KUO
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A semiconductor structure includes a substrate, at least one dielectric layer and a capacitor structure. The at least one dielectric layer is disposed over the substrate, and the at least one dielectric layer includes a step edge profile. The capacitor structure is disposed over the substrate. The capacitor structure includes a bottom electrode, a capacitor dielectric layer and a top electrode. The bottom electrode covers the step edge profile of the at least one dielectric layer and has a first step profile substantially conformal to the step edge profile of the at least one dielectric layer. The capacitor dielectric layer covers the bottom electrode and has a second step profile substantially conformal to the first step profile. The top electrode covers the capacitor dielectric layer.
A semiconductor structure, comprising:
A semiconductor structure, comprising:
semiconductor structure of claim 8, further comprising:
semiconductor structure of claim 10, further comprising a cap barrier layer on the at least one dielectric layer, wherein the bottom electrode, the capacitor dielectric layer and the top electrode further extend to cover a top surface of the cap barrier layer.
A method of manufacturing a semiconductor structure, comprising:
Dependencies are inferred from the claim text.