Systems and methods for processing a substrate

A method of processing a semiconductor substrate comprising:

• passing an inert gas through a horizontal flow section of an inert gas flow stabilizer, the inert gas flow stabilizer positioned above an access port to a processing chamber;
• passing the inert gas from the horizontal flow section to a vertical flow section of the inert gas flow stabilizer, the horizontal flow section of the inert gas flow stabilizer overlying the vertical flow section of the inert gas flow stabilizer;
• receiving, in a vertical flow section of an inert gas flow receiver, the inert gas from the inert gas flow stabilizer;
• receiving, from the vertical flow section of the inert gas flow receiver, the inert gas into a horizontal flow section of the inert gas flow receiver, the vertical flow section of the inert gas flow receiver overlying the horizontal flow section of the inert gas flow receiver;
• passing the semiconductor substrate through the access port;
• and
• processing the semiconductor substrate.