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US 2023/0066769 A1Published application
Spad structure
AssigneeDB HiTek Co., Ltd.
InventorsJu Hwan JUNG, Young Hwan HYEON, Jong Man KIM, Byoung Soo CHOI
Life of this patent
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Abstract
Provided is a single-photon avalanche diode (SPAD) structure. More particularly, provided is a SPAD structure having an isolation structure for electrical and/or physical separation between a pixel area and a logic area.
Claims19
A SPAD structure, comprising a unit pixel comprising:
- a substrate having a first conductivity type having a first surface and a second surface facing each other;
- an impurity region having a second conductivity type at the second surface of the substrate;
- an impurity region having the first conductivity type at the second surface of the substrate, the impurity region having the first conductivity type surrounding the impurity region having the second conductivity type;
- a cathode connected to the impurity region having the second conductivity type;
- an anode connected to the impurity region having the first conductivity type;
- and
- an isolation film extending from the first surface,
- wherein the isolation film is at a boundary of the unit pixel.
5 more elements
A SPAD structure, comprising a unit pixel comprising:
- a substrate having a first conductivity type and a first surface and a second surface facing each other;
- a first impurity region having a second conductivity type at the second surface of the substrate;
- a second impurity region having a first conductivity type at the second surface of the substrate, the second impurity region surrounding the first impurity region;
- a cathode connected to the first impurity region;
- an anode connected to the second impurity region;
- and
- an isolation film extending from the first surface,
- wherein the second impurity region is under the isolation film.
5 more elements
A SPAD structure, comprising a unit pixel comprising:
- a substrate having a first conductivity type and a first surface and a second surface facing each other;
- an impurity region having a second conductivity type at the second surface of the substrate;
- a second impurity region at the second surface of the substrate, the second impurity region surrounding the first impurity region and having the first conductivity type;
- a third impurity region having the first conductivity type in the substrate;
- a cathode connected to the first impurity region;
- an anode connected to the third impurity region;
- and
- an isolation film extending from the first surface.
5 more elements
A SPAD structure, comprising:
- a pixel area comprising a plurality of unit pixels in a substrate having a first conductivity type and a first surface and a second surface facing each other, each unit pixel comprising a first impurity region having a second conductivity type at the second surface of the substrate;
- a second impurity region having the first conductivity type at the second surface of the substrate, the second impurity region surrounding the first impurity region;
- and a first isolation film extending from the first surface and being spaced apart from the second surface;
- a logic area surrounding the plurality of unit pixels;
- and
- a second isolation film at or adjacent to a boundary between the logic area and the pixel area.
3 more elements
Dependencies are inferred from the claim text.