Silicon carbonitride gapfill with tunable carbon content

A method of depositing a film, the method comprising:

• exposing a substrate in a processing chamber to a precursor having a structure of general formula (I) or general formula (II)
• wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide to deposit a silicon-containing film on the substrate;
• exposing the substrate to a silane to react with the silicon-containing film to form a silicon carbonitride (SiCN) film on the substrate, the SiCN film having a carbon content of at least 5 at. %;
• purging the processing chamber of the precursor and silane;
• flowing a stream of ammonia (NH3) over the substrate surface;
• and
• turning on a bias power to generate a plasma.

A method of depositing a film, the method comprising:

• forming a flowable film on a substrate surface by exposing the substrate surface to a precursor mixture, the precursor mixture comprising a silane and a precursor having a structure of general formula (I)
• wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide;
• flowing a stream of ammonia (NH3) over the substrate surface;
• and
• turning on a bias power to generate a plasma,
• wherein the flowable film has a carbon content of at least 5 at. %.