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US 2023/0066449 A1Published application
Transistor, manufacturing method of semiconductor device, and manufacturing method of hbnc layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Piao Chuu, Tse-An Chen
Life of this patent
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Abstract
A transistor includes a channel layer, a gate stack, and source/drain regions. The channel layer includes a graphene layer and hexagonal boron nitride (hBN) flakes dispersed in the graphene layer. Orientations of the hBN flakes are substantially aligned. The gate stack is over the channel layer. The source/drain regions are aside the gate stack.
Claims20
A transistor, comprising:
- a channel layer, wherein the channel layer comprises a graphene layer and hexagonal boron nitride (hBN) flakes dispersed in the graphene layer, and orientations of the hBN flakes are substantially aligned;
- a gate stack over the channel layer;
- and
- source/drain regions aside the gate stack.
1 more element
A manufacturing method of a hBNC layer, comprising:
- depositing a polycrystalline copper film on a substrate;
- converting the polycrystalline copper film into a single-crystalline copper film by performing a thermal annealing process;
- providing a first process gas on the single-crystalline copper film to form hexagonal boron nitride (hBN) flakes on the single-crystalline copper film;
- and
- providing a second process gas on the single-crystalline copper film to form a graphene layer filling a space between the hBN flakes.
2 more elements
A manufacturing method of a semiconductor device, comprising:
- depositing a copper film on a substrate;
- performing a thermal annealing process on the copper film;
- depositing hexagonal boron nitride (hBN) flakes onto the copper film;
- depositing a graphene layer on the copper film to wrap around the hBN flakes, so as to form a hBNC layer;
- transferring the hBNC layer onto a wafer;
- forming a gate stack over the hBNC layer;
- and
- forming source/drain regions aside the gate stack.
5 more elements
Dependencies are inferred from the claim text.