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US 2023/0066437 A1Published application
Lateral bipolar transistors
AssigneeGlobalFoundries U.S. Inc.
InventorsHong Yu, Judson R. Holt, Alexander Derrickson
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base having at least one sidewall with a gradient concentration of semiconductor material; an emitter on a first side of the extrinsic base; and a collector on a second side of the extrinsic base.
Claims20
A structure comprising:
- an extrinsic base comprising at least one sidewall having a gradient concentration of semiconductor material;
- an emitter on a first side of the extrinsic base;
- and
- a collector on a second side of the extrinsic base.
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A structure comprising:
- an extrinsic base comprising a core of a first semiconductor material and a second semiconductor material, and a sidewall with a gradient concentration of the second semiconductor material;
- a raised emitter of comprising the first semiconductor material on a first side of the extrinsic base;
- and
- a raise collector of the first semiconductor material on a second side of the extrinsic base.
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A method comprising:
- forming an extrinsic base comprising at least one sidewall with a gradient concentration of semiconductor material;
- forming an emitter on a first side of the extrinsic base;
- and
- forming a collector on a second side of the extrinsic base.
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Dependencies are inferred from the claim text.