Transistor and method for manufacturing the same

A semiconductor structure (200) comprising:

• a first terminal (234) coupled to a substrate (202) of the semiconductor structure (200), the first terminal (234) comprising:
• a first portion of a tunneling layer (212) formed on the substrate (202), and
• a first gate (218) formed on the first portion of the tunneling layer (212);
• a second terminal (240) coupled to the substrate (200) and adjacent to the first terminal, the second terminal (240) comprising:
• a second portion of the tunneling layer (212) formed on the substrate (200),
• a second gate (214) formed on the second portion of the tunneling layer (212), and
• a dielectric structure (216) formed on a top surface and side surfaces of the second gate (214);
• a third terminal (246) coupled to an insulating structure (210) of the semiconductor structure (200) and adjacent to the second terminal, the third terminal (246) comprising:
• a third gate (220) formed on the insulating structure (210);
• and
• a fourth terminal (228) coupled to a source/drain (208) of the semiconductor structure (200).

A method, comprising:

• depositing a tunneling layer (212) on a substrate (202) of a semiconductor structure (200), the tunneling layer (212) having a first portion and a second portion;
• depositing a first conductive structure (214) on the first portion of the tunneling layer (212);
• depositing a dielectric structure (216) on a top surface and on side surfaces of the first conductive structure (214);
• depositing a second conductive structure (218) on the second portion of the tunneling layer (212),
• wherein the dielectric structure (216) is disposed between a side surface of the second conductive structure (218) and a first side surface of the first conductive structure (214);
• and
• depositing a third conductive structure (220) on an insulating structure (210) of the semiconductor structure (200),
• wherein the dielectric structure (216) is disposed between a side surface of the third conductive structure (220) and a second side surface of the first conductive structure (214).