Neutron Detectors and Methods of Fabricating the Same Using Boron as Neutron Conversion Layer and Conformal Doping Source

A thermal neutron detector, comprising:

• a semiconductor substrate comprising microstructures on a first surface thereof,
• wherein the semiconductor substrate comprises:
• an n-doped section formed by n-type doping on a second surface of the semiconductor substrate, the second surface being opposite from the first surface;
• and
• a p-doped section formed by p-type doping on the first surface of the semiconductor substrate using a p-type dopant material,
• wherein the p-type dopant material is filled in the microstructures,
• wherein diffusion annealing has been performed on the semiconductor substrate having the p-type dopant material backfilled in the microstructures such that at least one element from the p-type dopant material has diffused into the semiconductor substrate through sidewalls of the microstructures, and
• wherein each microstructure of the microstructures in the first surface of the semiconductor substrate has a depth of 500 μm or less.