Structure and formation method of semiconductor device with conductive bumps

A method for forming a semiconductor device structure, comprising:

• forming an interconnection structure over a semiconductor substrate;
• forming a first conductive feature over the interconnection structure, wherein the first conductive feature has a first conductive via;
• forming a second conductive feature over the first conductive feature, wherein the second conductive feature has a second conductive via, and the first conductive via is laterally separated from the second conductive via;
• forming an insulating layer over the second conductive feature;
• and
• forming a conductive pillar over the second conductive feature, wherein the conductive pillar extends across opposite sidewalls of the first conductive via and opposite sidewalls of the second conductive via, the conductive pillar has a protruding portion extending through the insulating layer, the conductive pillar is electrically connected to the first conductive feature through the second conductive feature, and the protruding portion is laterally separated from the second conductive via.

A method for forming a semiconductor device structure, comprising:

• forming a lower conductive via over a substrate;
• forming an upper conductive via over the substrate, wherein the upper conductive via is higher than the lower conductive via;
• and
• forming a conductive pillar over the substrate, wherein the conductive pillar is higher than the upper conductive via, the conductive pillar covers opposite edges of the upper conductive via and opposite edges of the lower conductive via, the conductive pillar has a protruding portion extending towards the substrate from a lower surface of the conductive pillar, the conductive pillar is electrically connected to the lower conductive via and the upper conductive via, the protruding portion of the conductive pillar does not overlap a center of the upper conductive via in a vertical direction perpendicular to a main surface of the semiconductor substrate, and the upper conductive via does not overlap a center of the lower conductive via in the vertical direction.

A method for forming a semiconductor device structure, comprising:

• forming a lower conductive via over a substrate;
• forming an upper conductive via over the substrate, wherein the upper conductive via is higher than the lower conductive via;
• and
• forming a conductive pillar over the substrate, wherein the conductive pillar is higher than the upper conductive via, the conductive pillar extends across an entirety of the upper conductive via and an entirety of the lower conductive via, the conductive pillar has a protruding portion extending towards the substrate from a lower surface of the conductive pillar, the conductive pillar is electrically connected to the lower conductive via and the upper conductive via, a center of the upper conductive via is laterally separated from a center of the protruding portion by a first distance, a center of the lower conductive via is laterally separated from the center of the protruding portion by a second distance, and the first distance is greater than the second distance.