Plasma processing apparatus and semiconductor device manufacturing method

Abstract

A plasma processing apparatus of an embodiment includes: a processing container in which a substrate is processed; an upper electrode that is installed in the processing container; a substrate placement table that includes a lower electrode facing the upper electrode and on which the substrate is placed; an outer circumferential ring that is arranged on an outer edge portion of the substrate placement table and surrounds a periphery of the substrate; and a power supply that supplies power to at least one of the upper electrode and the lower electrode to generate plasma in the processing container, in which the outer circumferential ring has a pattern including a component of a deposition film generated by a plasma reaction on an outermost surface.

Dependencies are inferred from the claim text.