Molecular layer deposition liner for 3d nand

A semiconductor processing method comprising:

• etching one or more features partially through a stack of layers formed on a substrate, wherein the stack of layers comprises alternating layers including silicon oxide, and wherein the stack of layers comprises more than 100 layers;
• halting the etching prior to penetrating fully through the stack of layers formed on the substrate;
• forming a layer of carbon-containing material along the stack of layers on the substrate, wherein the layer of carbon-containing material comprises a metal;
• and
• etching the one or more features fully through the stack of layers on the substrate.

A semiconductor processing method comprising:

• etching one or more features partially through a stack of layers formed on a substrate, wherein the stack of layers comprises alternating layers including silicon oxide, and wherein the stack of layers comprises more than 100 layers;
• halting the etching prior to penetrating fully through the stack of layers formed on the substrate;
• forming a layer of carbon-containing material along the stack of layers on the substrate, wherein the layer of carbon-containing material comprises a metal, and wherein the layer of carbon-containing material is formed conformally along the stack of layers;
• and
• etching the one or more features fully through the stack of layers on the substrate.