Plasma processing apparatus
AssigneeHitachi High-Tech Corporation
InventorsIsao Mori, Masaru Izawa, Naoki Yasui, Norihiko Ikeda, Kazuya Yamada
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AssigneeHitachi High-Tech Corporation
InventorsIsao Mori, Masaru Izawa, Naoki Yasui, Norihiko Ikeda, Kazuya Yamada
Estimating the term…
A plasma processing apparatus includes a processing chamber in which a sample is subjected to plasma processing, a first radio frequency power supply that supplies radio frequency power for generating plasma, a sample stage on which the sample is mounted, and a second radio frequency power supply that supplies radio frequency power to the sample stage, the plasma processing apparatus further includes a DC power supply that applies a DC voltage, that is changed according to a periodically repeated waveform, to the sample stage, and the waveform of one cycle has a period in which amplitude changes by a predetermined amount or more during a predetermined time. Accordingly, charged particles on a wafer surface are removed, a trench shape with high verticality can be obtained, and damage to a film that is not to be etched inside a trench can be reduced.
A plasma processing apparatus, comprising:
(canceled)
A plasma processing apparatus, comprising:
Dependencies are inferred from the claim text.