System driven pass-through voltage adjustment to improve read disturb in memory devices

A method comprising:

• performing a first read operation on a memory device in accordance with a pass-through voltage setting that defines a pass-through voltage applied to one or more cells of the memory device during read operations, the performing of the first read operation comprising applying the pass-through voltage to all word lines in a page of the memory device;
• counting, by a processing device, a first number of zero bits read from the memory device based on the first read operation;
• comparing, by the processing device, the first number of zero bits read from the memory device with a threshold number of failing bits, the threshold number of failing bits being based on a page size of the memory device and an expected failure rate;
• and
• based on the first number of zero bits exceeding the threshold number of failing bits, increasing, by the processing device, the pass-through voltage by adjusting the pass-through voltage setting.

A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, configure the processing device to perform operations comprising:

• performing a read operation on a memory device in accordance with a pass-through voltage setting that defines a pass-through voltage applied to one or more cells of the memory device during read operations, the performing of the read operation comprising applying the pass-through voltage to all word lines in a page of the memory device;
• counting a number of zero bits read from the memory device based on the read operation;
• comparing the number of zero bits read from the memory device with a threshold number of failing bits, the threshold number of failing bits being based on a page size of the memory device and an expected failure rate;
• and
• based on the number of zero bits exceeding the threshold number of failing bits, increasing the pass-through voltage by adjusting the pass-through voltage setting.