Lateral bipolar transistor structure with marker layer for emitter and collector

A lateral bipolar transistor structure comprising:

• a semiconductor on insulator (SOI) layer on a buried insulator layer and adjacent a trench isolation (TI);
• a semiconductor stack on a first portion of the SOI layer, the semiconductor stack including a first marker layer, a doped semiconductor layer on the first marker layer, and a second marker layer on the doped semiconductor layer;
• a raised E/C terminal on the semiconductor stack;
• a base terminal on a second portion of the SOI layer, the base terminal including an intrinsic base region on the SOI layer and an extrinsic base region on the intrinsic base region;
• and
• a spacer horizontally between the raised E/C terminal and the extrinsic base region of the base terminal.

A method of forming a lateral bipolar transistor structure, the method comprising:

• forming an emitter/collector (E/C) region having a first doping type in a first portion of a semiconductor layer;
• forming an intrinsic base region in a second portion of the semiconductor layer adjacent the E/C region, the intrinsic base region having a second doping type opposite the first doping type;
• forming a marker layer on the E/C region of the semiconductor layer;
• forming a raised E/C terminal over the marker layer;
• forming an extrinsic base on the intrinsic base region of the semiconductor layer;
• and
• forming a spacer horizontally between the raised E/C terminal and the extrinsic base.