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US 2023/0058079 A1Published application
Etching method, plasma processing apparatus, and substrate processing system
AssigneeTokyo Electron Limited
InventorsTakayuki KATSUNUMA, Masanobu HONDA, Yuta NAKANE, Shinya ISHIKAWA
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Abstract
An etching method includes (a) performing a plasma etching on an organic film, having a mask formed thereon, to form a recess in the organic film; (b) forming an organic protective film on a side wall surface of the recess in the organic film; and (c) performing an additional plasma etching on the organic film after (b).
Claims19
A plasma processing apparatus, comprising:
- a chamber having at least one gas inlet and at least one gas outlet;
- a substrate support disposed in the chamber;
- a plasma generator configured to generate a plasma from a gas in the chamber;
- and
- a controller configured to cause:
- (a) placing a substrate on the substrate support, the substrate including an etching target film, an organic film on the etching target film and a mask on the organic film;
- (b) performing a first plasma etching to form a first recess in the organic film;
- (c) forming an organic protective film on a sidewall of the first recess in the organic film;
- (d) performing a second plasma etching to etch a bottom of the first recess in the organic film until the etching target film is exposed;
- (e) performing a third plasma etching to etch the exposed etching target film through the mask and the etched organic film, thereby forming a second recess in the etching target film ;
- and
- (f) forming an additional organic protective film on a sidewall of the second recess in the etching target film.
9 more elements
A plasma processing apparatus, comprising:
- a chamber having at least one gas inlet and at least one gas outlet;
- a substrate support disposed in the chamber;
- a plasma generator configured to generate a plasma from a gas in the chamber;
- and
- a controller configured to cause:
- (a) placing a substrate on the substrate support, the substrate including an etching target film, an organic film on the etching film and a mask on the organic film;
- (b) performing a first plasma etching to form a first recess in the organic film;
- (c) forming an organic protective film on a sidewall of the first recess in the organic film;
- (d) performing a second plasma etching to etch a bottom of the first recess in the organic film until the etching target film is exposed;
- (e) performing a third plasma etching to etch the exposed etching target film through the mask and the etched organic film, thereby forming a second recess in the etching target film ;
- (f) performing an ashing process to remove the etched organic film;
- (g) forming an additional organic protective film on a sidewall of the second recess in the etching target film,
- wherein (c) is started when an aspect ratio, of a depth of the recess divided by a width of the recess, is 5 or lower, and
- the organic protective film is conformally formed on the sidewall of the first recess in the organic film.
11 more elements
A plasma processing apparatus, comprising:
- a chamber having at least one gas inlet and at least one gas outlet;
- a substrate support disposed in the chamber;
- a plasma generator configured to generate a plasma from a gas in the chamber;
- and
- a controller configured to cause:
- (a) providing a substrate including a silicon-containing film, an organic film on the silicon-containing film, and a mask on the organic film;
- (b) forming a recess on the organic film by etching the organic film using plasma generated from the oxygen-containing gas;
- (c) forming an organic protective film on a side wall defining the recess;
- (d) performing an additional plasma etching on the organic film after (c);
- (e) alternately repeating (b) and (c);
- and
- (f) etching the silicon-containing film by plasma generated from the fluorocarbon gas after the silicon-containing film is partially exposed by (d),
- wherein (b) is stopped before the bottom of the recess reaches the boundary between the silicon-containing film and the organic film,
- the organic film is a spin-on carbon film or an amorphous carbon film,
- the organic film has a thickness of 3 μm or more,
- the mask is an antireflection film containing silicon, and
- the material of the organic protective film is different from the material of the organic film.
14 more elements
Dependencies are inferred from the claim text.