Solid-state image sensor

Abstract

A solid-state image sensor according to the present disclosure includes a photodiode, a conversion circuit (current-voltage conversion circuit), a luminance change detection circuit (comparator), and a light-shielding unit (light-shielding film). The photodiode photoelectrically converts incident light to generate a photocurrent. The conversion circuit (current-voltage conversion circuit) converts the photocurrent into a voltage signal. The luminance change detection circuit (comparator) detects a change in luminance of the incident light on the basis of the voltage signal. The light-shielding unit (light-shielding film) shields incidence of light on the impurity diffusion region included in a circuit that inputs the voltage signal to the luminance change detection circuit (comparator).

Dependencies are inferred from the claim text.