Gallium nitride (gan) integrated circuit technology with resonators

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a layer or substrate comprising gallium and nitrogen;
• a first plurality of electrodes over the layer or substrate;
• a resonator layer on the first plurality of electrodes, the resonator layer comprising aluminum and nitrogen;
• and
• a second plurality of electrodes on the resonator layer, wherein individual ones of the second plurality of electrodes are vertically over and aligned with corresponding individual ones of the first plurality of electrodes.

A method of fabricating an integrated circuit structure, the method comprising:

• forming a layer or substrate comprising gallium and nitrogen;
• forming a first plurality of electrodes over the layer or substrate;
• forming a resonator layer on the first plurality of electrodes, the resonator layer comprising aluminum and nitrogen;
• and
• forming a second plurality of electrodes on the resonator layer, wherein individual ones of the second plurality of electrodes are vertically over and aligned with corresponding individual ones of the first plurality of electrodes.