Light-emitting diode chip and light-emitting diode device

A light-emitting diode chip, comprising:

• a semiconductor layer having a sidewall, a top side and a bottom side opposite to the top side, wherein the sidewall connects the top side and the bottom side, and a concave-convex structure is at the top side of the semiconductor layer;
• an insulating layer covering the sidewall and the bottom side of the semiconductor layer, wherein the insulating layer has a protruding portion extending and protruding above the concave-convex structure along a direction parallel to the sidewall, and a vertical distance between a highest point of the concave-convex structure and a highest point of the protruding portion is greater than 0.5 μm and is less than four times a thickness of the semiconductor layer;
• a first electrode on the bottom side of the semiconductor layer and penetrating through the insulating layer;
• and
• a second electrode adjacent to the first electrode, wherein the second electrode is on the bottom side of the semiconductor layer and penetrates through the insulating layer.