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AssigneeJusung Engineering Co., Ltd.
InventorsIl Hyong CHO, Duck Ho KIM, CHUL-JOO HWANG
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The present disclosure relates to a substrate processing method and apparatus which can supply gas to a plurality of process chamber through one gas supply unit, and supply different gases at the same time, thereby improving the uniformity of the thicknesses of thin films deposited in the respective chambers. The substrate processing method and apparatus can perform a process in only one chamber by supplying gas to only the chamber at the same time or perform different processes in the plurality of chambers by supplying different gases to the respective chambers. Therefore, films having uniform thicknesses can be deposited in the respective chambers, and the gas supply efficiency can be improved.
A substrate processing method of a substrate processing apparatus which includes a gas supply unit configured to supply process gas, a first gas line configured to supply the process gas to a first chamber having a first substrate seated therein, a second gas line configured to supply the process gas to a second chamber having a second substrate seated therein, a third gas line configured to supply the process gas, supplied from the gas supply unit, to each of the first and second gas lines, and a control unit configured to control the first line, the second line, and the third gas line,
A substrate processing method of a substrate processing apparatus which includes a gas supply unit configured to supply process gas, a first gas line configured to supply the process gas to a first chamber, a first valve configured to open/close the first gas line, a second gas line configured to supply the process gas to a second chamber, a second valve configured to open/close the second gas line, and a third gas line configured to supply the process gas, supplied from the gas supply unit, to each of the first and second gas lines,
A substrate processing apparatus comprising:
Dependencies are inferred from the claim text.