Test circuits and semiconductor test methods
AssigneeChangxin Memory Technologies, Inc.
InventorChihCheng Liu
Life of this patent
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Abstract
The present application relates to a test circuit, comprising: M test units, each test unit having a first terminal and a second terminal, a first terminal of each test unit being connected to a power wire, a second terminal of each test unit being connected to a ground wire, M being a positive integer; each test unit comprises a TDDB test component, a switch, and a control circuit; the TDDB test component has a first equivalent resistance before being broken down, the TDDB test component has a second equivalent resistance after being broken down, and the first equivalent resistance is greater than the second equivalent resistance.
Claims14
A test circuit, comprising:
- M test units, each test unit having a first terminal and a second terminal, the first terminal of each test unit being connected to a power wire, the second terminal of each test unit being connected to a ground wire, M being a positive integer;
- each test unit comprises a time dependent dielectric breakdown (TDDB) test component, a switch, and a control circuit, wherein a first terminal of the TDDB test component is the first terminal of the test unit and a second terminal of the TDDB test component is connected to a first terminal of the switch, a second terminal of the switch is the second terminal of the test unit, and the first terminal of the switch is connected to a control terminal of the switch through the control circuit;
- and
- the TDDB test component has a first equivalent resistance before being broken down, the TDDB test component has a second equivalent resistance after being broken down, and the first equivalent resistance is greater than the second equivalent resistance.
Dependencies are inferred from the claim text.