Selective patterning with molecular layer deposition

A semiconductor processing method comprising:

• forming a layer of carbon-containing material on a substrate disposed within a processing region of a semiconductor processing chamber at a substrate temperature of greater than or about 100° C., wherein the substrate comprises an exposed region of a first dielectric material and an exposed region of a metal-containing material, wherein the layer of carbon-containing material is selectively formed over the exposed region of the metal-containing material, and wherein forming the layer of carbon-containing material comprises one or more cycles of:
• providing a first molecular species that selectively couples with the metal-containing material, wherein the first molecular species comprises an amine head group, and
• providing a second molecular species that selectively couples with the first molecular species, wherein the second molecular species comprises oxygen;
• and
• selectively depositing a second dielectric material on the exposed region of the first dielectric material.