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US 2023/0057074 A1Published application
Rf switch device and method of manufacturing same
AssigneeDB HiTek Co., Ltd.
InventorsJin Hyo JUNG, Hyun Jin KIM, Seung Ki KO, Sang Gil KIM, Tae Ryoong PARK, Ki Hun LEE, Kyong Rok KIM
Life of this patent
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Abstract
An RF switch device and a method of manufacturing the same are proposed. A trap area is formed in or on a surface of a highly resistive substrate to trap carriers accumulating on the surface of the substrate, thus improving RF characteristics.
Claims19
An RF switch device, comprising:
- a highly resistive substrate having a well-forming area including an active device and a well, and a peripheral area;
- a gate electrode on the highly resistive substrate in the well-forming area;
- a source and a drain in the highly resistive substrate in the well-forming area;
- an isolation layer in or on a surface of the highly resistive substrate in the well-forming area adjacent to a boundary with the peripheral area;
- and
- a trap-rich layer in or on the surface of the highly resistive substrate in the peripheral area.
3 more elements
An RF switch device, comprising:
- a highly resistive substrate having a well-forming area including an active device and a well, and a peripheral area;
- a gate electrode on the highly resistive substrate in the well-forming area;
- a source and a drain in the highly resistive substrate in the well-forming area;
- an isolation layer in or on a surface of the highly resistive substrate;
- a metal line on the highly resistive substrate in the peripheral area;
- and
- a trap-rich layer in or on the surface of the highly resistive substrate in the peripheral area,
- wherein the peripheral area comprises a first area vertically overlapping the metal line, and a second area.
5 more elements
An RF switch device, comprising:
- a highly resistive substrate having a well-forming area including an active device and a well, and a peripheral area including a first area that vertically overlaps a metal line and a second area;
- a gate electrode on the highly resistive substrate in the well-forming area;
- a source and a drain provided inside the highly resistive substrate in the well-forming area;
- an isolation layer in or on a surface of the highly resistive substrate on a boundary between the well-forming area and the peripheral area and in the second area;
- the metal line, on the highly resistive substrate in the peripheral area;
- and
- a trap-rich layer in or on the surface of the highly resistive substrate under the metal line.
4 more elements
A method of manufacturing an RF switch device, comprising:
- forming an isolation layer on a boundary of a well-forming area and on a surface of a highly resistive substrate;
- forming an active device and a well in the well-forming area;
- and
- forming a plurality of first trap areas on the surface of the highly resistive substrate,
- wherein the isolation layer comprises a plurality of isolation layers between adjacent first trap areas, spaced apart from each other in at least one direction.
2 more elements
Dependencies are inferred from the claim text.