Photoresist developer and methods of use
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTzu-Yang LIN, Chen-Yu LIU, Ching-Yu CHANG, Chin-Hsiang LIN
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Abstract
Novel photoresist developing compositions including a deprotonation agent, such as a nitrogen containing organic base capable of deprotonating a surface of portions of a photoresist layer exposed to radiation.
Claims20
A lithography method, comprising:
- forming a resist layer over a workpiece;
- exposing the resist layer to radiation;
- and
- exposing the resist layer to a developer that removes a portion of the resist layer, thereby forming a patterned resist layer, wherein the developer includes an organic solvent and a deprotonation agent.
A lithography method, comprising:
- forming a resist layer over a workpiece;
- exposing the resist layer to extreme ultraviolet radiation;
- and
- altering a surface of a portion of the resist layer exposed to EUV radiation by contacting portions of the resist layer exposed to EUV radiation with a developer including an organic solvent and a nitrogen containing organic base;
- and
- removing portions of the resist layer not exposed to EUV radiation.
A lithography developing composition including an organic solvent and a deprotonation agent which, when contacted with a resist layer which has been exposed to an electromagnetic radiation, causes solubility of the exposed resist layer in the lithography developing composition to decrease.
Dependencies are inferred from the claim text.