Defect detection in memory based on active monitoring of read operations
AssigneeMicron Technology, Inc.
InventorsZhenlei Shen, Tingjun Xie, Frederick Adi, Zhenming Zhou
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Abstract
A first error rate based on a first read operation performed on a memory device is obtained. An individual data unit of the memory device that satisfies a first threshold criterion associated with a defect candidate is determined. A defect verification operation on the individual data unit to obtain a second error rate is performed. The individual data unit that satisfies a second threshold criterion associated with a defect is determined.
Claims20
A system comprising:
- a memory device;
- and
- a processing device, operatively coupled with the memory device, to perform operations comprising:
- determining whether a first error rate of an individual data unit of the memory device satisfies a first threshold criterion associated with identifying a defect candidate;
- responsive to determining that the first error rate satisfies the first threshold criterion, obtaining a second error rate of the individual data unit;
- determining whether the second error rate satisfies a second threshold criterion associated with identifying a defect;
- and
- responsive to determining that the second error rate satisfies the second threshold criterion, marking the individual data unit as defective.
A method comprising:
- determining whether a first error rate of an individual data unit of a memory device satisfies a first threshold criterion associated with identifying a defect candidate;
- responsive to determining that the first error rate satisfies the first threshold criterion, obtaining a second error rate of the individual data unit;
- determining whether the second error rate satisfies a second threshold criterion associated with identifying a defect;
- and
- responsive to determining that the second error rate satisfies the second threshold criterion, marking the individual data unit as defective.
A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
- determining whether a first error rate of an individual data unit of a memory device satisfies a first threshold criterion associated with identifying a defect candidate;
- responsive to determining that the first error rate satisfies the first threshold criterion, obtaining a second error rate of the individual data unit;
- determining whether the second error rate satisfies a second threshold criterion associated with identifying a defect;
- and
- responsive to determining that the second error rate satisfies the second threshold criterion, marking the individual data unit as defective.
Dependencies are inferred from the claim text.