Method for manufacturing resistive memory cells

Abstract

This method comprises the following steps: a) providing a stack successively comprising: a substrate; a first electrode; a first dielectric layer, having a first electrical strength; a second metal electrode; a second dielectric layer, having a second dielectric strength that is strictly less than the first dielectric strength; a third electrode; the first dielectric layer and the second electrode having a first interface, the second dielectric layer and the second electrode having a second interface; b) etching the stack by bombardment with electrically charged species, so as to define resistive memory cells; the bombardment of step b) being adapted so that electrically charged species accumulate at the first and second interfaces of each resistive memory cell, so as to generate an electric field that is strictly less than the first electrical strength and is strictly greater than the second dielectric strength.

Dependencies are inferred from the claim text.