Display device and method of manufacturing the same

A display device comprising:

• a first semiconductor layer;
• a first conductive layer disposed on the first semiconductor layer and including a first capacitor electrode at least partially overlapping the first semiconductor layer in a plan view to constitute a first transistor;
• a second capacitor electrode disposed on the first conductive layer and including an overlapping area overlapping the first capacitor electrode in a plan view to constitute a first capacitor, the second capacitor electrode including a protruding area protruding from the overlapping area;
• a second semiconductor layer disposed on the second capacitor electrode and including a third capacitor electrode overlapping the second capacitor electrode in a plan view to constitute a second capacitor, the third capacitor electrode exposing the protruding area in a plan view;
• a second conductive layer disposed on the second semiconductor layer and at least partially overlapping the second semiconductor layer;
• and
• a third conductive layer disposed on the second conductive layer.

A method of manufacturing a display device, the method comprising:

• forming a first semiconductor layer on a substrate;
• forming a first insulating layer covering the first semiconductor layer;
• forming, on the first insulating layer, a first conductive layer including a first capacitor electrode at least partially overlapping the first semiconductor layer to constitute a first transistor;
• forming a second insulating layer covering the first conductive layer;
• forming, on the second insulating layer, a second capacitor electrode overlapping the first capacitor electrode to constitute a first capacitor;
• forming a third insulating layer covering the second capacitor electrode;
• forming, on the third insulating layer, a second semiconductor layer including a third capacitor electrode overlapping the second capacitor electrode to constitute a second capacitor;
• forming a fourth insulating layer covering the second semiconductor layer;
• and
• forming a second conductive layer disposed on the fourth insulating layer and at least partially overlapping the second semiconductor layer.