Split RDL Connection Between Die and UBM

A method of making a semiconductor device, comprising:

• providing a semiconductor die;
• forming a first contact pad over the semiconductor die;
• forming a second contact pad over the semiconductor die;
• and
• forming an under-bump metallization layer (UBM) over the first contact pad and second contact pad.

A semiconductor device, comprising:

• a semiconductor die;
• a first contact pad formed over the semiconductor die;
• a second contact pad formed over the semiconductor die;
• a third contact pad formed over the semiconductor die;
• and
• an under-bump metallization layer (UBM) formed over the first contact pad, second contact pad, and third contact pad, wherein the UBM electrically connects the first contact pad to the second contact pad and the third contact pad is electrically isolated from the UBM.

A semiconductor device, comprising:

• a semiconductor die;
• a first contact pad formed over the semiconductor die;
• a second contact pad formed over the semiconductor die;
• and
• an under-bump metallization layer (UBM) formed over the first contact pad and second contact pad.