Multilayer film and imaging element

An imaging element comprising:

• a first photoelectric conversion section having sensitivity to light having a wavelength in an infrared light region;
• a second photoelectric conversion section that is stacked on a light incidence surface side of the first photoelectric conversion section, the second photoelectric conversion section having sensitivity to light having a wavelength in a visible light region;
• and
• a multilayer film that is provided between the first photoelectric conversion section and the second photoelectric conversion section,
• the multilayer film including
• semiconductor layers in each of which a value of an optical constant k1 for light having a wavelength in a visible light region among optical constants k is larger than a value of an optical constant k2 for light having a wavelength in an infrared light region, the optical constants k each serving as an extinction coefficient that includes an imaginary part of a complex refractive index, and
• dielectric layers, wherein
• the semiconductor layers and the dielectric layers are alternately stacked and the multilayer film has an optical distance of 0.3 μm or more and 10 μm or less in a stack direction and absorbs at least a portion of visible light and transmits infrared light.