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US 2023/0056697 A1Published application
Semiconductor device and manufacturing method thereof
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., Tsmc China Company Limited
InventorZheng-Long CHEN
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Abstract
A method includes forming a dielectric layer on a substrate; forming a first spiral electrode, a second spiral electrode, and a spiral common electrode in the dielectric layer, the first spiral electrode extending in a first spiral path, the second spiral electrode extending in a second spiral path, and the spiral common electrode extending in a third spiral path laterally between the first and second spiral paths.
Claims20
A method, comprising:
- forming a dielectric layer on a substrate;
- and
- forming a first spiral electrode, a second spiral electrode, and a spiral common electrode in the dielectric layer, the first spiral electrode extending in a first spiral path, the second spiral electrode extending in a second spiral path, and the spiral common electrode extending in a third spiral path laterally between the first and second spiral paths.
A method, comprising:
- forming a first dielectric layer on a substrate;
- forming a first spiral cathode electrode in the first dielectric layer;
- forming a second dielectric layer over the first dielectric layer;
- and
- forming a first spiral anode electrode in the second dielectric layer, the first spiral anode electrode spaced apart from the first spiral cathode electrode and overlapping the first spiral cathode electrode.
2 more elements
A capacitor, comprising:
- a first spiral cathode pattern;
- a second spiral cathode pattern in a same level height as the first spiral cathode pattern, the second spiral cathode pattern being concentric with the first spiral cathode pattern;
- and
- a first anode pattern laterally between the first and second spiral cathode patterns.
1 more element
Dependencies are inferred from the claim text.