Memory storage device, an operation method of the memory storage device, test method and electronic device

An operation method of a memory storage device including a status indicating circuit, the operation method comprising:

• performing a first initialization operation on the memory storage device;
• toggling a first status parameter at a first time, on the basis of a first status of the memory storage device in which the first initialization operation is performed;
• performing a second initialization operation on the memory storage device;
• toggling a second status parameter at a second time following the first time, on the basis of a second status of the memory storage device in which the second initialization operation is performed;
• providing the first status parameter and the second status parameter to the status indicating circuit;
• and
• switching a first resistor to a second resistor on the basis of toggling of the first status parameter, and switching the second resistor to a third resistor on the basis of toggling of the second status parameter, by the status indicating circuit,
• wherein the first to third resistors are different from each other.

A test method comprising:

• connecting a memory storage device to a main board;
• connecting a test apparatus to a test pin connected to the memory storage device;
• performing, by the memory storage device, a plurality of initialization operations and changing a resistance value connected to the test pin based on performance results of the plurality of initialization operations;
• and
• measuring the resistance value and outputting status information of the memory storage device on the basis of the resistance value, by the test apparatus.