Manufacturing method of semiconductor structure

A manufacturing method of a semiconductor structure, comprising:

• providing a substrate, wherein the substrate comprises multiple active regions and an isolation structure for isolating each of the active regions;
• the multiple active regions are arranged in several columns along a first direction;
• forming multiple spaced first isolation sidewall structures on the substrate, wherein first opening regions are formed between adjacent first isolation sidewall structures, and each of the first opening regions is used to expose at least two columns of active regions;
• forming a conductive layer on the substrate located in the first opening regions, wherein a height of the conductive layer is lower than heights of the first isolation sidewall structures;
• and
• removing part of the conductive layer located in the first opening region to form two spaced bit line structures, wherein the two bit line structures are respectively in contact with one of the two first isolation sidewall structures forming the first opening region.