Process of transferring of vcsel epi layer onto metal host substrate

A method of transferring a semiconductor laser epi layer onto a metal host substrate, comprising:

• mounting an epi layer of a semiconductor chip including a substrate onto a planar handle wafer with an adhesive, wherein a backside of the substrate faces upward and away from the epi layer and the planar handle wafer;
• treating the backside to substantially remove the substrate, while leaving the epi layer undamaged;
• forming a metal on the treated backside resulting in a metalized backside;
• removing the planar handle wafer from the epi layer by dissolving the adhesive with a solvent, wherein a modified semiconductor chip remains;
• annealing the semiconductor chip to form a semiconductor-metal ohmic contact interface;
• and
• attaching the metallized backside to a mechanical block, wherein the metal block metal block comprises a 3D mechanical block including at least one embedded channel formed therein and configured to accept cooling liquid therethrough, a first tubular connection for providing cooling liquid to the at least one embedded channel, and a second tubular connection for removing cooling liquid from the at least one embedded channel.

A method of transferring a semiconductor laser epi layer onto a metal host substrate, comprising:

• mounting an epi layer of a semiconductor chip including a substrate onto a planar handle wafer with an adhesive, wherein a backside of the substrate faces upward and away from the epi layer and the planar handle wafer;
• treating the backside to substantially remove the substrate, while leaving the epi layer undamaged, wherein the treating can be done either chemically and mechanically;
• evaporating a thin film metal on the treated backside
• electroforming bulk copper resulting in a metalized backside;
• removing the planar handle wafer from the epi layer by dissolving the adhesive with a solvent, wherein a modified semiconductor chip remains;
• annealing the semiconductor chip to form a semiconductor-metal ohmic contact interface;
• and
• attaching the metallized backside to a mechanical block, wherein the metal block comprises a 3D mechanical block including at least one embedded channel formed therein and configured to accept cooling liquid therethrough, a first tubular connection for providing cooling liquid to the at least one embedded channel, and a second tubular connection for removing cooling liquid from the at least one embedded channel.