Low temperature graphene growth

A method of semiconductor processing, comprising:

• delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber, wherein a flowrate ratio of the carbon-containing precursor to the hydrogen-containing precursor is maintained greater than or about 1:1;
• and
• forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber, wherein the substrate is maintained at a temperature below or about 400° C.

A method of semiconductor processing, comprising:

• delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber, wherein a flowrate ratio of the hydrogen-containing precursor to the carbon-containing precursor is maintained greater than or about 1:1;
• and
• forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber, wherein the processing region is maintained plasma free while forming the layer of graphene on the substrate.