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US 2023/0055752 A1Published application
Highly efficient microdevices
AssigneeVueReal Inc.
InventorsGholamreza Chaji, Ehsanollah Fathi, Yunhan Li, Hossein Zamani Siboni
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Abstract
Methods and structures are disclosed for highly efficient vertical devices. The vertical device comprising a plurality of planar active layers formed on a substrate, at least one of a top layer of the plurality of the layers is formed as a plurality of nano-pillars and a passivation layer formed on a space between the plurality of the nanopillars.
Claims14
A vertical device comprising:
- a plurality of planar active layers formed on a substrate, at least one of a top layer of the plurality of planar active layers is formed as a plurality of nano-pillars;
- a first passivation layer formed on a space between the plurality of nano-pillars and at least a part of sidewalls of the plurality of nano-pillars;
- and
- a gate electrode formed on a part of the first passivation layer covering the space between the plurality of nano-pillars and the part of the sidewalls of the plurality of nano-pillars,
- wherein the gate electrode is configured to bias the plurality of nano-pillars to control a charge accumulated on a surface of the plurality of nano-pillars or a current passing through the plurality of nano-pillars.
2 more elements
Dependencies are inferred from the claim text.