Multilayer dielectric stack for damascene top-via integration

A method of making a BEOL component, the method comprising:

• forming a first dielectric layer on a substrate;
• forming an etch stop layer on the first dielectric layer;
• forming a second dielectric layer on the etch stop layer;
• forming at least one opening through the second dielectric layer, through the etch stop layer, and through the first dielectric layer;
• forming a first metal layer in the at least one opening;
• forming a patterning layer on the first metal layer and on the second dielectric layer, the patterning layer including at least one further opening;
• and
• forming a second metal layer in the at least one further opening.

A computer program product comprising a computer readable storage medium having program instructions embodied therewith, the program instructions being executable by a computer system to cause the computer system to perform a method for forming a BEOL component, the method comprising:

• forming a first dielectric layer on a substrate;
• forming an etch stop layer on the first dielectric layer;
• forming a second dielectric layer on the etch stop layer;
• forming at least one opening through the second dielectric layer, through the etch stop layer, and through the first dielectric layer;
• forming a first metal layer in the at least one opening;
• forming a patterning layer on the first metal layer and on the second dielectric layer, the patterning layer including at least one further opening;
• and
• forming a second metal layer in the at least one further opening.