Semiconductor structure and method for preparing same

A method for preparing a semiconductor structure, comprising:

• providing a substrate and a gate located on a part of the substrate, wherein a source or a drain is provided in the substrate located at either side of the gate;
• a dielectric layer is also provided on the substrate, wherein the dielectric layer covers a surface of the gate;
• forming a contact structure penetrating through the dielectric layer and electrically connected with the source or the drain;
• and
• forming a first electrical connection part and a second electrical connection part arranged at intervals, wherein the first electrical connection part and the second electrical connection part are both located on a top surface of the dielectric layer, the second electrical connection part is also in contact with a partial top surface of the contact structure, and the first electrical connection part comprises a first barrier layer and a first conductive layer which are stacked, wherein in a direction from the source to the drain, a distance between a sidewall of the first barrier layer facing the contact structure and the contact structure is a first distance, and a distance between a sidewall of the first conductive layer facing the contact structure and the contact structure is a second distance, the first distance being greater than the second distance.