Semiconductor memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsKiseok LEE, Keunnam KIM, Hui-Jung KIM, Wonsok LEE, Min Hee CHO
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AssigneeSamsung Electronics Co., Ltd.
InventorsKiseok LEE, Keunnam KIM, Hui-Jung KIM, Wonsok LEE, Min Hee CHO
Estimating the term…
A semiconductor memory device is disclosed. The semiconductor memory device may include a bit line extending in a first direction, a word line extending in a second direction perpendicular to the first direction, a channel pattern between the bit line and the word line, the channel pattern including a horizontal channel portion, which is connected to the bit line, and a vertical channel portion, which is extended from the horizontal channel portion in a third direction perpendicular to the first and second directions, and a gate insulating pattern between the word line and the channel pattern. The horizontal channel portion of the channel pattern may be disposed parallel to a fourth direction that is inclined to the first and second directions.
A semiconductor memory device, comprising:
A semiconductor memory device, comprising:
A semiconductor memory device, comprising:
(canceled)
Dependencies are inferred from the claim text.