Semiconductor structure with embedded capacitor

A semiconductor device, comprising:

• a nanosheet field-effect transistor device disposed on a semiconductor substrate, wherein the nanosheet field-effect transistor device comprises:
• a first nanosheet stack structure disposed on a first region of the semiconductor substrate;
• a second nanosheet stack structure disposed on the first nanosheet stack structure;
• a capacitor structure disposed in a second region of the semiconductor substrate;
• and
• a third nanosheet stack structure disposed on a third region of the semiconductor substrate, the second region being disposed between the first region and the third region.

A method for fabricating a semiconductor device, comprising:

• forming a stacked device on a first region of a substrate, the substrate comprising the first region and a second region, the stacked device comprising a first transistor and a second transistor, at least a portion of the second transistor being disposed under the first transistor;
• forming a capacitor opening in the second region of the substrate;
• forming a capacitor structure in the capacitor opening, the capacitor structure comprising a capacitor conductor;
• and
• coupling the first transistor and the second transistor to the capacitor conductor.